The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Feb. 05, 2004
Tetsu Kachi, Nisshin, JP;
Yoshitaka Nakano, Owariasahi, JP;
Tsutomu Uesugi, Seto, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-gun, JP;
Abstract
A semiconductor device is formed by a first layercomposed of AlGaN, a second layercomposed of GaN, a gate electrode, a source electrode, and a drain electrode. The first layerhas a regionformed between the gate electrodeand the second layer. A channel is formed in the vicinity of the boundaryof the first layerand the second layer. The second layerhas p-type conductivity and is in contact with the source electrode When electrons flow in the channel, the electrons collide with surrounding atoms, and holes are formed. If holes are accumulated inside the semiconductor device, the presence of the accumulated holes causes dielectric breakdown. In the semiconductor device of the invention, holes are discharged to the outside of the device thorough the second layerand the source electrode, and accumulation of holes can be prevented.