The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Nov. 14, 2005
Masahiro Sugimoto, Toyota, JP;
Tsutomu Uesugi, Seto, JP;
Hiroyuki Ueda, Kasugai, JP;
Narumasa Soejima, Nisshin, JP;
Tetsu Kachi, Nisshin, JP;
Masahiro Sugimoto, Toyota, JP;
Tsutomu Uesugi, Seto, JP;
Hiroyuki Ueda, Kasugai, JP;
Narumasa Soejima, Nisshin, JP;
Tetsu Kachi, Nisshin, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A semiconductor device is provided with a drain electrode, a semiconductor base plate, an electric current regulation layercovering a part of a surface of the semiconductor base plateand leaving a non-covered surfaceat the surface of the semiconductor base plate, a semiconductor layercovering a surface of the electric current regulation layer, and a source electrodeformed at a surface of the semiconductor layer. A drift region, a channel forming region, and a source regionare formed within the semiconductor layer. The drain electrodeis connected to a first terminal of a power source, and the source electrodeis connected to a second terminal of the power source. With this semiconductor layer, it is possible to increase withstand voltage or reduce the occurrence of current leakage.