The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Jan. 20, 2006
Masahiro Sugimoto, Toyota, JP;
Tetsu Kachi, Nisshin, JP;
Tsutomu Uesugi, Seto, JP;
Hiroyuki Ueda, Kasugai, JP;
Narumasa Soejima, Nisshin, JP;
Masahiro Sugimoto, Toyota, JP;
Tetsu Kachi, Nisshin, JP;
Tsutomu Uesugi, Seto, JP;
Hiroyuki Ueda, Kasugai, JP;
Narumasa Soejima, Nisshin, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
A semiconductor devicecomprises a heterojunction between a lower semiconductor layermade of p-type gallium nitride and an upper semiconductor layermade of n-type AlGaN, wherein the upper semiconductor layerhas a larger band gap than the lower semiconductor layer. The semiconductor devicefurther comprises a drain electrodeformed on a portion of a top surface of the upper semiconductor layer, a source electrodeformed on a different portion of the top surface of the upper semiconductor layer, and a gate electrodeelectrically connected to the lower semiconductor layer. The semiconductor devicecan operate as normally-off.