The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Aug. 12, 2009
Masahiro Sugimoto, Toyota, JP;
Tat-sing Paul Chow, Niskayuna, NY (US);
Zhongda LI, Troy, NY (US);
Tetsu Kachi, Aichi-ken, JP;
Tsutomu Uesugi, Aichi-ken, JP;
Masahiro Sugimoto, Toyota, JP;
Tat-Sing Paul Chow, Niskayuna, NY (US);
Zhongda Li, Troy, NY (US);
Tetsu Kachi, Aichi-ken, JP;
Tsutomu Uesugi, Aichi-ken, JP;
Rensselaer Polytechnic Institute, Troy, NY (US);
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway.