IDiyas

For the Inventor, By the Inventor

Taoyuan, Taiwan

Tse-An Chen

USPTO Granted Patents = 22

Average Co-Inventor Count = 4.1

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:

goldMedal22 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal6 out of 1,712 
 
National Taiwan University
 patents
bronzeMedal5 out of 131 
 
National Taiwan Normal University
 patents
where one patent can have more than one assignee

Years Active: 2021-2025

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22 patents (USPTO):
1. 12490478 - Semiconductor device (2025-12-02),
2. 12400860 - Semiconductor device with two-dimensional materials (2025-08-26),
3. 12237375 - Semiconductor structure of stacked two-dimensional material layers (2025-02-25),
4. 12230680 - Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer (2025-02-18),
5. 12224334 - Semiconductor device with gate dielectric formed using selective deposition (2025-02-11),
6. 12211931 - Fin field-effect transistor device with low-dimensional material and method (2025-01-28),
7. 12211930 - Semiconductor device (2025-01-28),
8. 12191144 - Semiconductor device and manufacturing method thereof (2025-01-07),
9. 12151213 - Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes (2024-11-26),
10. 12033850 - Semiconductor device and manufacturing method thereof (2024-07-09),
11. 11784225 - Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers (2023-10-10),
12. 11749528 - Method of manufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode (2023-09-05),
13. 11699739 - Semiconductor device with gate dielectric formed using selective deposition (2023-07-11),
14. 11688605 - Semiconductor device with two-dimensional materials (2023-06-27),
15. 11508572 - Semiconductor device and manufacturing method thereof (2022-11-22),

Title: The Innovative Journey of Tse-An Chen

Introduction:

Tse-An Chen, a visionary inventor hailing from Taoyuan, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Tse-An Chen's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

Throughout his illustrious career, Tse-An Chen has been recognized for his pioneering work in developing sustainable solutions for global challenges. His inventions have not only revolutionized industries but have also improved the quality of life for many around the world.

Collaborations:

Tse-An Chen has collaborated with leading research institutions, universities, and multinational companies to further advance his inventions and bring them to the market. His ability to work across disciplines and with diverse teams has been instrumental in his success as an inventor.

Conclusion:

In conclusion, Tse-An Chen's passion for innovation, coupled with his dedication to creating a positive impact on society, solidifies his position as a trailblazing inventor in the world of technology. His relentless pursuit of excellence continues to inspire future generations of inventors and innovators.

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