The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2025

Filed:

Jul. 28, 2022
Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

National Taiwan Normal University, Taipei, TW;

Inventors:

Chun-Yi Chou, Hsinchu, TW;

Po-Hsien Cheng, Taipei, TW;

Tse-An Chen, Taoyuan, TW;

Miin-Jang Chen, Taipei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/042 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/28194 (2013.01); H01L 21/76224 (2013.01); H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 21/823821 (2013.01); H01L 21/823857 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/5226 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method includes forming a mask layer above a substrate. The substrate is patterned by using the mask layer as a mask to form a trench in the substrate. An isolation structure is formed in the trench, including feeding first precursors to the substrate. A bias is applied to the substrate after feeding the first precursors. With the bias turned on, second precursors are fed to the substrate. Feeding the first precursors, applying the bias, and feeding the second precursors are repeated.


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