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For the Inventor, By the Inventor

Taipei, Taiwan

Po-Hsien Cheng

This inventor holds 17 USPTO granted patents and 20 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., National Taiwan University, National Taiwan Normal University. Active years: 2017-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Hsien Cheng. Retrieved from https://idiyas.com/inventor/po-hsien-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Taipei, TW (2017 - 2024)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:

goldMedal17 out of 43,553 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal7 out of 1,402 
 
National Taiwan University
 patents
bronzeMedal2 out of 136 
 
National Taiwan Normal University
 patents
where one patent can have more than one assignee

Years Active: 2017-2025

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Areas of Expertise:
Semiconductor Devices
FinFET Technology
Ferroelectric Inductors
Atomic Layer Deposition
Backside Power Via
Air Gap Formation
Deposition Apparatus
Metallic Channel Device
Manufacturing Methods
Recessed Sacrificial Layer
MFM Inductor Circuits
Fine Structure Fabrication
17 patents (USPTO):Explore Patents
1. 12512408 - Semiconductor devices including backside power via and methods of forming the same (2025-12-30),
2. 12439624 - Method of manufacturing semiconductor devices including forming an air gap based on removing a recessed sacrificial layer (2025-10-07),
3. 12426348 - Semiconductor device and method for forming the same (2025-09-23),
4. 12374616 - Semiconductor device and method for manufacturing the same (2025-07-29),
5. 12349419 - Ferroelectric MFM inductor and related circuits (2025-07-01),
6. 12324185 - Semiconductor device, FinFET device and methods of forming the same (2025-06-03),
7. 12191144 - Semiconductor device and manufacturing method thereof (2025-01-07),
8. 12110587 - Deposition apparatus and method with EM radiation (2024-10-08),
9. 12033850 - Semiconductor device and manufacturing method thereof (2024-07-09),
10. 11984485 - Semiconductor device, FinFET device and methods of forming the same (2024-05-14),
11. 11728426 - Ferroelectric MFM inductor and related circuits (2023-08-15),
12. 11508572 - Semiconductor device and manufacturing method thereof (2022-11-22),
13. 11441221 - Method of performing atomic layer deposition (2022-09-13),
14. 11271083 - Semiconductor device, FinFET device and methods of forming the same (2022-03-08),
15. 11114564 - Ferroelectric MFM inductor and related circuits (2021-09-07),

Title: Po-Hsien Cheng: Innovator from Taipei

Introduction: Po-Hsien Cheng is a renowned inventor hailing from Taipei, Taiwan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Po-Hsien Cheng holds several patents in the areas of electronics, renewable energy, and medical devices, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Po-Hsien Cheng has worked with leading research institutions and companies, consistently pushing the boundaries of technology and driving forward progress in his field.

Collaborations: Throughout his career, Po-Hsien Cheng has collaborated with top universities, multinational companies, and fellow inventors, fostering a culture of innovation and knowledge-sharing within the industry.

Conclusion: Po-Hsien Cheng's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor, shaping the landscape of technology for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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