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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11441221 B1

PDFFull Text
Date of Patent:
Sep. 13, 2022

Filed:

Sep. 11, 2020

Method of performing atomic layer deposition

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Po-Hsien Cheng, Hsinchu, TW;

Chung-Ting Ko, Kaohsiung, TW;

Tsung-Hsun Yu, Hsinchu, TW;

Tze-Liang Lee, Hsinchu, TW;

Chi On Chui, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/403 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/823842 (2013.01);
Abstract

In an embodiment, a method of manufacturing a semiconductor device includes preparing a deposition processing chamber by flowing first precursors to form a dielectric coat along an inner sidewall of the deposition processing chamber and flowing a second precursor to form a hydrophobic layer over the dielectric coat. In addition one or more deposition cycles are performed. Next, the second precursor is flowed again to repair the hydrophobic layer.

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Cheng, Po-Hsien. (2022). Method of performing atomic layer deposition (U.S. Patent No. 11441221). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11441221

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