Hsinchu, Taiwan

Tsung-Hsun Yu

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.6

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2018-2022

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4 patents (USPTO):Explore Patents

Title: Tsung-Hsun Yu: Innovator in Semiconductor Manufacturing

Introduction

Tsung-Hsun Yu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 4 patents. His innovative approaches have advanced the efficiency and effectiveness of semiconductor device production.

Latest Patents

One of Tsung-Hsun Yu's latest patents is a method of performing atomic layer deposition. This method involves preparing a deposition processing chamber by flowing first precursors to form a dielectric coat along the inner sidewall of the chamber. It also includes flowing a second precursor to create a hydrophobic layer over the dielectric coat, followed by performing one or more deposition cycles. Additionally, the second precursor is flowed again to repair the hydrophobic layer. Another notable patent focuses on cluster tool techniques with improved efficiency. This method enhances processing efficiency by transferring a first lot of wafers from a transfer load lock to a designated storage load lock while simultaneously managing a second lot of wafers.

Career Highlights

Tsung-Hsun Yu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in developing advanced manufacturing techniques that are crucial for modern electronics.

Collaborations

He has collaborated with notable colleagues, including Su-Horng Lin and Victor Y Lu, contributing to various projects that enhance semiconductor technology.

Conclusion

Tsung-Hsun Yu's innovative work in semiconductor manufacturing has led to significant advancements in the industry. His patents reflect a commitment to improving production processes and efficiency.

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