The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Oct. 23, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tse-An Chen, Taoyuan, TW;
Lain-Jong Li, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/18 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/24 (2006.01); H01L 29/76 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/187 (2013.01); H01L 21/0254 (2013.01); H01L 21/02568 (2013.01); H01L 21/6835 (2013.01); H01L 21/7813 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 29/66462 (2013.01); H01L 29/7606 (2013.01); H01L 2221/68368 (2013.01);
Abstract
The present disclosure describes a method that includes forming a first two-dimensional (2D) layer on a first substrate and attaching a second 2D layer to a carrier film. The method also includes bonding the second 2D layer to the first 2D layer to form a heterostack including the first and second 2D layers. The method further includes separating the first 2D layer of the heterostack from the first substrate and attaching the heterostack to a second substrate. The method further includes removing the carrier film from the second 2D layer.