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Lain-Jong Li

USPTO Granted Patents = 58 (Patent Applications = 14)

Average Co-Inventor Count = 3.7

ph-index = 11

Forward Citations = 424(Granted Patents)

Forward Citations (Not Self Cited) = 410(Dec 10, 2025)

Location History:

Hsin-Chiu, TW (2001)
Hualien, TW (2002 - 2006)
HicnChu, TW (2014)
Taoyuan, TW (2016)
Jubei, TW (2017)
Hualien County, TW (2021)
Hsin-Chu, TW (2003 - 2024)

Company Filing History:

52 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Massachusetts Institute of Technology

patents

4. 1 out of 220

National Chung Shan Institute of Science and Technology

patents

Years Active: 2001-2025

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Areas of Expertise:

Semiconductor Device

CMOS Fabrication

Resistive Memory Devices

Nano Transistors

Field Effect Transistor

Two-Dimensional Materials

Graphene Electrodes

Low Dimensional Materials

Hexagonal Boron Nitride

Copper Interconnects

Dielectric Materials

Transistor Manufacturing

58 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12490478 - Semiconductor device (2025-12-02),

2. 12439650 - CMOS fabrication methods for back-gate transistor (2025-10-07),

3. 12400860 - Semiconductor device with two-dimensional materials (2025-08-26),

4. 12387944 - Semiconductor device and method of manufacturing semiconductor device (2025-08-12),

5. 12364170 - Resistive memory devices using a carbon-based conductor line and methods for forming the same (2025-07-15),

6. 12237375 - Semiconductor structure of stacked two-dimensional material layers (2025-02-25),

7. 12211931 - Fin field-effect transistor device with low-dimensional material and method (2025-01-28),

8. 12211930 - Semiconductor device (2025-01-28),

9. 12170323 - Nano transistors with source/drain having side contacts to 2-D material (2024-12-17),

10. 12166113 - Semiconductor device and method of fabricating the same (2024-12-10),

11. 12151213 - Method of manufacturing semiconductor devices including the steps of removing one or more of the nanotubes from the stack of nanotubes, and/or removing spacers that surrounds each of the plurality of nanotubes, and forming gate dielectric and/or gate electrode to the nanotubes (2024-11-26),

12. 11955527 - Nano transistors with source/drain having side contacts to 2-D material (2024-04-09),

13. 11923203 - Semiconductor device and method of manufacturing semiconductor device (2024-03-05),

14. 11910732 - Resistive memory devices using a carbon-based conductor line and methods for forming the same (2024-02-20),

15. 11854895 - Transistors with channels formed of low-dimensional materials and method forming same (2023-12-26),

Title: Inventor Lain-Jong Li - Revolutionizing Technology in Hsinchu

Introduction: Lain-Jong Li is a pioneering inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Li's recent patents focus on advanced semiconductor materials and nanotechnology, showcasing his expertise in developing cutting-edge solutions for the industry.

Career Highlights: With a career spanning over two decades, Li has held key positions in leading research institutions and technology companies, driving forward the boundaries of scientific discovery and technological advancement.

Collaborations: Throughout his career, Li has collaborated with top researchers, engineers, and scientists globally, fostering a culture of innovation and knowledge exchange in the field of technology.

Conclusion: Lain-Jong Li's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true visionary in the world of inventions and patents.

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