The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2024
Filed:
Aug. 06, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chao-Ching Cheng, Hsinchu, TW;
Yi-Tse Hung, Hsinchu, TW;
Hung-Li Chiang, Taipei, TW;
Tzu-Chiang Chen, Hsinchu, TW;
Lain-Jong Li, Hsinchu, TW;
Jin Cai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a first sacrificial layer over a substrate, and forming a sandwich structure over the first sacrificial layer. The sandwich structure includes a first isolation layer, a two-dimensional material over the first isolation layer, and a second isolation layer over the two-dimensional material. The method further includes forming a second sacrificial layer over the sandwich structure, forming a first source/drain region and a second source/drain region on opposing ends of, and contacting sidewalls of, the two-dimensional material, removing the first sacrificial layer and the second sacrificial layer to generate spaces, and forming a gate stack filling the spaces.