The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Aug. 30, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chih-Piao Chuu, Hsinchu, TW;
Tse-An Chen, Taoyuan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/02444 (2013.01); H01L 21/0254 (2013.01); H01L 29/045 (2013.01); H01L 29/1606 (2013.01);
Abstract
A transistor includes a channel layer, a gate stack, and source/drain regions. The channel layer includes a graphene layer and hexagonal boron nitride (hBN) flakes dispersed in the graphene layer. Orientations of the hBN flakes are substantially aligned. The gate stack is over the channel layer. The source/drain regions are aside the gate stack.