The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Jan. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
National Taiwan Normal University, Taipei, TW;
Tung-Ying Lee, Hsinchu, TW;
Tse-An Chen, Taoyuan, TW;
Tzu-Chung Wang, Hsinchu, TW;
Miin-Jang Chen, Taipei, TW;
Yu-Tung Yin, Taipei, TW;
Meng-Chien Yang, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
NATIONAL TAIWAN NORMAL UNIVERSITY, Taipei, TW;
Abstract
A semiconductor device includes source and a drain above a substrate and spaced apart along a first direction, and a semiconductor channel extending between the source and the drain. The semiconductor device further includes gate spacers, an interfacial layer, and a metal gate structure. The gate spacers are disposed on the semiconductor channel and spaced apart by a spacer-to-spacer distance along the first direction. The interfacial layer is on the semiconductor channel. The interfacial layer extends a length along the first direction, and the length is less than a minimum of the spacer-to-spacer distance along the first direction. The metal gate structure is over the interfacial layer.