Torrance, CA, United States of America

Timothy Donald Henson

This inventor holds 31 USPTO granted patents and 3 published patent applications, primarily in Power Semiconductor Devices. Top assignees: International Rectifier Corporation, Infineon Technologies Americas Corp.. Active years: 2005-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Timothy Donald Henson. Retrieved from https://idiyas.com/inventor/timothy-donald-henson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 93.5

Average Co-Inventor Count = 2.2

ph-index = 7

Forward Citations = 127(Granted Patents)


Location History:

  • Redondo Beach, CA (US) (2005 - 2007)
  • Mount Shasta, CA (US) (2017 - 2018)
  • Torrance, CA (US) (2005 - 2019)

Company Filing History:


Years Active: 2005-2019

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Areas of Expertise:
Power Semiconductor Device
Trench FET
MOSFET
Integrated Structure
Voltage Controlled Termination
Superjunction Device
Field Plate
Snubber Resistance
Buck Converter
On-Resistance
Breakdown Voltage
Cavity
31 patents (USPTO):Explore Patents

Title: Innovations in Power Semiconductor Devices by Timothy Donald Henson

Introduction

Timothy Donald Henson is a distinguished inventor based in Torrance, California, known for his significant contributions to the field of power semiconductor technology. With a remarkable portfolio of 31 patents, Henson has established himself as a key figure in the development of advanced semiconductor devices.

Latest Patents

Among his latest innovations, Henson has developed the "Method of Fabricating a Power Semiconductor Device." This invention outlines a novel design for a power device, such as a power MOSFET, featuring a unique configuration of upper and lower trenches. The upper trench is wider than the lower trench, and the implementation of trench dielectric within both trenches ensures superior performance. Additionally, Henson's invention boasts an innovative design where the trench dielectric's bottom thickness is greater than the sidewall thickness, enhancing the device's efficiency.

Henson's other notable patent is for a "Semiconductor Device Having a Cavity." This device features a semiconductor substrate that includes a drift region, a gate electrode trench, and a field electrode needle trench. The arrangement ensures that the gate electrode is insulated from the drift region by a gate dielectric layer. Meanwhile, the field electrode needle trench is positioned laterally to the gate electrode trench, which includes a field electrode insulated by a cavity, contributing to the overall functionality and advancements in power semiconductor technology.

Career Highlights

Throughout his career, Timothy Henson has worked for leading companies in the semiconductor industry, including International Rectifier Corporation and Infineon Technologies Americas Corp. His work in these organizations has positioned him at the forefront of innovation in power semiconductor devices.

Collaborations

In his journey of invention, Henson has collaborated with talented individuals such as Kapil Kelkar and Ling Ma. These partnerships have fueled innovation and have been instrumental in bringing groundbreaking ideas to fruition within the semiconductor technology domain.

Conclusion

Timothy Donald Henson's contributions to power semiconductor technology reflect his relentless pursuit of innovation. With 31 patents to his name and groundbreaking inventions that push the boundaries of what is possible, Henson continues to be an influential inventor in advancing the field of semiconductor devices. His collaboration with industry peers further highlights the collaborative spirit that drives progress in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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