The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
May. 01, 2014
Applicant:
International Rectifier Corporation, El Segundo, CA (US);
Inventors:
Timothy D. Henson, Torrance, CA (US);
Kapil Kelkar, Torrance, CA (US);
Ljubo Radic, Torrance, CA (US);
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 29/94 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/765 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/3083 (2013.01); H01L 21/765 (2013.01); H01L 29/66674 (2013.01); H01L 29/7801 (2013.01);
Abstract
Disclosed is a power device, such as a power MOSFET, and methods for fabricating same. The device includes a field plate trench. The device further includes first and second trench dielectrics inside the field plate trench. The device also includes a field plate situated over the first trench dielectric and within the second trench dielectric. A combined thickness of the first and second trench dielectrics at a bottom of the field plate trench is greater than a sidewall thickness of the second trench dielectric.