Ljubo Radic

Title: Ljubo Radic: Innovator in Power Semiconductor Devices

Introduction

Ljubo Radic is a prominent inventor based in Torrance, CA, known for his contributions to the field of power semiconductor devices. With a total of 6 patents to his name, Radic has made significant advancements in the technology that underpins modern electronic devices.

Latest Patents

Radic's latest patents include innovative methods for fabricating power semiconductor devices. One notable patent describes a power device, such as a power MOSFET, which features an upper trench situated over a lower trench. The upper trench is wider than the lower trench, and the device incorporates a trench dielectric inside the lower trench and on the sidewalls of the upper trench. Additionally, an electrode is situated within the trench dielectric, which has a bottom thickness greater than the sidewall thickness. Another patent focuses on a semiconductor device with a field plate double trench that also utilizes a thick bottom dielectric, showcasing Radic's expertise in enhancing the performance and efficiency of power devices.

Career Highlights

Throughout his career, Ljubo Radic has worked with leading companies in the semiconductor industry, including Infineon Technologies Americas Corp. and Globalfoundries Inc. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in power electronics.

Collaborations

Radic has collaborated with notable professionals in the field, including Timothy Donald Henson and Kapil Kelkar. These collaborations have further enriched his work and expanded the impact of his innovations.

Conclusion

Ljubo Radic's contributions to the field of power semiconductor devices highlight his role as a key innovator in the industry. His patents and collaborations reflect a commitment to advancing technology and improving electronic device performance.