The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Nov. 16, 2011
Kevin K. Chan, Staten Island, NY (US);
Peng Cheng, South Burlington, VT (US);
Qizhi Liu, Lexington, MA (US);
Ljubo Radic, Torrance, AZ (US);
Kevin K. Chan, Staten Island, NY (US);
Peng Cheng, South Burlington, VT (US);
Qizhi Liu, Lexington, MA (US);
Ljubo Radic, Torrance, AZ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked while a second portion of an intrinsic base layer is etched. As a consequence of the masking, the second portion of the intrinsic base layer is thinner than the first portion of the intrinsic base layer. An emitter and an extrinsic base layer are formed in respective contacting relationships with the first and second portions of the intrinsic base layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile