The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Jul. 28, 2017
Applicant:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Inventors:
Timothy D. Henson, Torrance, CA (US);
Kapil Kelkar, Torrance, CA (US);
Ljubo Radic, Torrance, CA (US);
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 21/765 (2006.01); H01L 21/308 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/283 (2013.01); H01L 21/3083 (2013.01); H01L 21/765 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 29/66666 (2013.01); H01L 29/66674 (2013.01); H01L 29/7801 (2013.01); H01L 29/7827 (2013.01);
Abstract
Disclosed is a power device, such as power MOSFET, and method for fabricating same. The device includes an upper trench situated over a lower trench, where the upper trench is wider than the lower trench. The device further includes a trench dielectric inside the lower trench and on sidewalls of the upper trench. The device also includes an electrode situated within the trench dielectric. The trench dielectric of the device has a bottom thickness that is greater than a sidewall thickness.