The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Nov. 16, 2015
Infineon Technologies Americas Corp., El Segundo, CA (US);
Harsh Naik, El Segundo, CA (US);
Timothy D. Henson, Mount Shasta, CA (US);
Niraj Ranjan, El Segundo, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
In one implementation, a vertical field-effect transistor (FET) includes a substrate having a drift region situated over a drain, a body region situated over the drift region and having source diffusions formed therein, a gate trench extending through the body region, and channel regions adjacent the gate trench. The channel regions are spaced apart along the gate trench by respective deep body implants. Each of the deep body implants is situated approximately under at least one of the source diffusions, and has a depth greater than a depth of the gate trench.