The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Jun. 09, 2014
Infineon Technologies Americas Corp., El Segundo, CA (US);
Kapil Kelkar, Torrance, CA (US);
Timothy D. Henson, Torrance, CA (US);
Ling Ma, Redondo Beach, CA (US);
Hugo Burke, Liantrisant, GB;
Niraj Ranjan, El Segundo, CA (US);
Alain Charles, Compiegne, FR;
INFINEON TECHNOLOGIES AMERICAS CORP., El Segundo, CA (US);
Abstract
Disclosed is a power semiconductor device that includes a plurality of source trenches and adjacent source regions. The plurality of source trenches extend from a top surface of a semiconductor substrate into the semiconductor substrate. The power semiconductor device further includes a plurality of gate trenches that extend from the top of the semiconductor substrate into the semiconductor substrate, and are arranged in hexagonal or zigzag patterns. A contiguous formation is created by the plurality of gate trenches, and the plurality of gate trenches separate the plurality of source trenches from one another.