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For the Inventor, By the Inventor

Pontyclun, United Kingdom

Hugo R Burke

This inventor holds 17 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Infineon Technologies Americas Corp., International Rectifier Corporation. Active years: 2008-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hugo R Burke. Retrieved from https://idiyas.com/inventor/hugo-r-burke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 76.5


Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 31(Granted Patents)


Location History:

  • Pontyclun, GB (2008)
  • Wales, GB (2008 - 2013)
  • Liantrisant, GB (2017)
  • Cardiff, GB (2014 - 2019)
  • Llantrisant, GB (2016 - 2022)

Company Filing History:

goldMedal13 out of 341 
 
Infineon Technologies Americas Corp.
 patents
silverMedal4 out of 1,231 
 
International Rectifier Corporation
 patents

Years Active: 2008-2022

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17 patents (USPTO):Explore Patents
1. 11217577 - Controlled resistance integrated snubber for power switching device (2022-01-04),
2. 10593664 - Controlled resistance integrated snubber for power switching device (2020-03-17),
3. 10388591 - Method of forming a reliable and robust electrical contact (2019-08-20),
4. 10236246 - Semiconductor devices and methods for forming a semiconductor device (2019-03-19),
5. 9966464 - Method of forming a semiconductor structure having integrated snubber resistance (2018-05-08),
6. 9818743 - Power semiconductor device with contiguous gate trenches and offset source trenches (2017-11-14),
7. 9812538 - Buried bus and related method (2017-11-07),
8. 9761550 - Power semiconductor device with a double metal contact and related method (2017-09-12),
9. 9673287 - Reliable and robust electrical contact (2017-06-06),
10. 9653597 - Method for fabricating a shallow and narrow trench FET and related structures (2017-05-16),
11. 9627328 - Semiconductor structure having integrated snubber resistance (2017-04-18),
12. 9620583 - Power semiconductor device with source trench and termination trench implants (2017-04-11),
13. 9318355 - Power semiconductor device with a double metal contact (2016-04-19),
14. 8791525 - Power semiconductor device including a double metal contact (2014-07-29),
15. 8536645 - Trench MOSFET and method for fabricating same (2013-09-17),

Title: The Innovative Journey of Hugo R Burke

Introduction:

Hugo R Burke, a distinguished inventor hailing from Pontyclun, GB, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Hugo R Burke's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and sustainable materials. His innovative solutions have garnered attention worldwide for their potential to revolutionize various industries.

Career Highlights:

With over two decades of experience in the innovation sector, Hugo R Burke has a proven track record of turning visionary ideas into tangible products. His keen eye for identifying gaps in the market and his dedication to solving complex problems have set him apart as a leading figure in the world of inventors.

Collaborations:

Throughout his career, Hugo R Burke has collaborated with top research institutions, leading companies, and visionary entrepreneurs to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful development and commercialization of several groundbreaking technologies.

Conclusion:

In conclusion, Hugo R Burke's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his reputation as a trailblazer in the world of inventors. His continued dedication to creating solutions that have a positive impact on society ensures that his legacy will endure for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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