The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Feb. 13, 2020
Infineon Technologies Americas Corp., El Segundo, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A method includes providing a semiconductor substrate having a main surface and a rear surface vertically spaced apart from the main surface, forming a switching device in an active region of the semiconductor substrate, the switching device having electrically conductive gate and field electrodes, forming an intermetal dielectric layer on the main surface over the active region and an inactive region that is laterally spaced apart from the active region, forming a source pad in the first metallization layer over the active region, forming a resistor trench in the inactive region, the resistor trench having a resistance section that is disposed below the main surface, and forming an electrical connection between the source pad and the field electrode that comprises the resistor. The resistor forms an exclusive current path between the source pad and the field electrode.