The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2014
Filed:
Feb. 25, 2008
Applicants:
Robert Montgomery, South Glamorgan, GB;
Hugo Burke, Cardiff, GB;
Philip Parsonage, Vale of Glamorgan, GB;
Susan Johns, Splott Cardiff, GB;
David Paul Jones, Cardiff, GB;
Inventors:
Robert Montgomery, South Glamorgan, GB;
Hugo Burke, Cardiff, GB;
Philip Parsonage, Vale of Glamorgan, GB;
Susan Johns, Splott Cardiff, GB;
David Paul Jones, Cardiff, GB;
Assignee:
International Rectifier Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.
Montgomery, Robert. (2014). Power semiconductor device including a double metal contact (U.S. Patent No. 8791525). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8791525
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile