The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Apr. 13, 2016
Applicant:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Inventors:
Robert Montgomery, Cardill, GB;
Hugo Burke, Llantrisant, GB;
Phillip Parsonage, Penarth, GB;
Susan Johns, Cardiff, GB;
David Paul Jones, South Glamorgan, GB;
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/56 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/56 (2013.01); H01L 24/02 (2013.01); H01L 24/10 (2013.01); H01L 24/13 (2013.01); H01L 29/66734 (2013.01); H01L 29/78 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/41775 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/11019 (2013.01); H01L 2224/11466 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/13 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/16 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05494 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.