The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Feb. 21, 2011
Timothy D. Henson, Torrance, CA (US);
Ling MA, Redondo Beach, CA (US);
Hugo Burke, Wales, GB;
David P. Jones, South Glamorgan, GB;
Martin Carroll, Cardiff, GB;
Timothy D. Henson, Torrance, CA (US);
Ling Ma, Redondo Beach, CA (US);
Hugo Burke, Wales, GB;
David P. Jones, South Glamorgan, GB;
Martin Carroll, Cardiff, GB;
International Rectifier Corporation, El Segundo, CA (US);
Abstract
According to an exemplary embodiment, a trench field-effect transistor (trench FET) includes a trench formed in a semiconductor substrate, the trench including a gate dielectric disposed therein. A source region is disposed adjacent the trench. The trench FET also has a gate electrode including a lower portion disposed in the trench and a proud portion extending laterally over the source region. A silicide source contact can extend vertically along a sidewall of the source region. Also, a portion of the gate dielectric can extend laterally over the semiconductor substrate. The trench FET can further include a silicide gate contact formed over the proud portion of the gate electrode.