The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

May. 13, 2016
Applicant:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Inventors:

Robert Haase, San Pedro, CA (US);

Timothy Henson, Mount Shasta, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 29/1095 (2013.01); H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes: providing a semiconductor substrate; forming at least one recess in the semiconductor substrate; the recess having a bottom and a sidewall; forming an auxiliary structure on the sidewall and the bottom of the recess and forming a hollow space within the recess; filling the hollow space of the recess with a filling material for forming a filling structure in the recess; removing portions of the auxiliary structure from the sidewall of the recess so as to form at least one cavity between the filling structure and the sidewall of the recess; and sealing the cavity at the first side of the semiconductor substrate.


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