The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Jan. 13, 2016
Infineon Technologies Americas Corp., El Segundo, CA (US);
Ashita Mirchandani, Torrance, CA (US);
Timothy D. Henson, Mount Shasta, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A semiconductor device includes a semiconductor substrate having a base region situated over a drift region, a source trench extending through the base region and into the drift region, the source trench having a shield electrode, a gate trench extending through the base region and into the drift region, the gate trench adjacent the source trench, the gate trench having a gate electrode situated above a buried electrode. The source trench is surrounded by the gate trench. The shield electrode is coupled to a source contact over the semiconductor substrate. The semiconductor device also includes a source region over the base region. The gate trench includes gate trench dielectrics lining a bottom and sidewalls of the gate trench. The source trench includes source trench dielectrics lining a bottom and sidewalls of the source trench.