The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Feb. 27, 2015
Infineon Technologies Americas Corp., El Segundo, CA (US);
Timothy D. Henson, Mount Shasta, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A power semiconductor device is disclosed. The power semiconductor device includes an upper drift region situated over a lower drift region, a field electrode embedded in the lower drift region, the field electrode not being directly aligned with a gate trench in a body region of the power semiconductor device, where respective top surfaces of the field electrode and the lower drift region are substantially co-planar. A conductive filler in the field electrode can be substantially uniformly doped, and the field electrode is in direct electrical contact with the upper drift region.