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For the Inventor, By the Inventor

Tainan, Taiwan

Sheng-Yuan Hsueh

USPTO Granted Patents = 57 

 

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 34(Granted Patents)

Forward Citations (Not Self Cited) = 33(Dec 10, 2025)


Location History:

  • Baoshan Township, Hsinchu County, TW (2007)
  • Tai-Nan, TW (2011 - 2024)

Company Filing History:

goldMedal57 out of 7,087 
 
United Microelectronics Corp.
 patents

Years Active: 2007-2025

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Areas of Expertise:
Semiconductor Device
High Electron Mobility Transistor
Magnetoresistive Random Access Memory
One-Time Programmable Memory
Memory Fabrication
Resistor-Transistor Logic Circuit
3D Semiconductor Structure
Embedded MRAM Structure
Data Storage Cell
Memory Cell Structure
GaN Structure
Fin Forced Stack Inverter
57 patents (USPTO):Explore Patents
1. 12500115 - Semiconductor device and method for fabricating the same (2025-12-16),
2. 12477814 - Semiconductor device and method of fabricating the same (2025-11-18),
3. 12419060 - Data storage cell, memory, and memory fabrication method thereof (2025-09-16),
4. 12396194 - High electron mobility transistor and method for fabricating the same (2025-08-19),
5. 12389593 - One-time programmable memory cell (2025-08-12),
6. 12261169 - Semiconductor device and method for fabricating the same (2025-03-25),
7. 12245424 - One-time programmable memory capacitor structure and manufacturing method thereof (2025-03-04),
8. 12206018 - High electron mobility transistor and method for fabricating the same (2025-01-21),
9. 12200947 - Magnetoresistive random access memory (2025-01-14),
10. 12150314 - Magnetoresistive random access memory (2024-11-19),
11. 12133377 - Bit cell structure for one-time-programming (2024-10-29),
12. 12132043 - Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same (2024-10-29),
13. 12119342 - Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same (2024-10-15),
14. 12009415 - High electron mobility transistor and method for fabricating the same (2024-06-11),
15. 11973133 - High electron mobility transistor and method for fabricating the same (2024-04-30),

Title: Sheng-Yuan Hsueh - Innovator from Tainan, Taiwan

Introduction: Sheng-Yuan Hsueh is a renowned inventor hailing from Tainan, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sheng-Yuan Hsueh holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Sheng-Yuan Hsueh has worked with leading tech companies and research institutions, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Sheng-Yuan Hsueh has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge exchange.

Conclusion: Sheng-Yuan Hsueh's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and entrepreneurs in Taiwan and beyond.

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