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For the Inventor, By the Inventor

Tainan, Taiwan

Sheng-Yuan Hsueh

This inventor holds 67 USPTO granted patents and 30 published patent applications and 4 EPO patents, primarily in Semiconductor Technology. Top assignee: United Microelectronics Corp.. Active years: 2007-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Yuan Hsueh. Retrieved from https://idiyas.com/inventor/sheng-yuan-hsueh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 67 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.5

ph-index = 4

Forward Citations = 46(Granted Patents)

Forward Citations (Not Self Cited) = 33(Dec 10, 2025)


Location History:

  • Baoshan Township, Hsinchu County, TW (2007)
  • Tai-Nan, TW (2011 - 2024)

Company Filing History:

goldMedal67 out of 7,278 
 
United Microelectronics Corp.
 patents

Years Active: 2007-2026

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Areas of Expertise:
High Electron Mobility Transistor
Magnetoresistive RAM
One-Time Programmable Memory
Semiconductor Device
Memory Fabrication
Data Storage Cell
Resistor-Transistor Logic
3D Semiconductor Structure
GaN Structure
Fabrication Method
67 patents (USPTO):Explore Patents
1. 12757415 - Semiconductor device and method for fabricating the same (2026-10-06),
2. 12751072 - Semiconductor device (2026-09-29),
3. 12733406 - Method of forming semiconductor device (2026-09-08),
4. 12727237 - Semiconductor device and method for fabricating the same (2026-09-01),
5. 12701728 - Semiconductor structure including Schottky barrier diode and manufacturing method thereof (2026-08-04),
6. 12684751 - Static random access memory including three-dimensional diodes (2026-07-14),
7. 12677413 - One-time programmable (OTP) semiconductor device (2026-07-07),
8. 12666702 - Semiconductor device and fabricating method of the same (2026-06-23),
9. 12660224 - Semiconductor device having non-metal semiconductor capacitor and MOS capacitor regions with doped fin-shaped structures and method for fabricating the same (2026-06-16),
10. 12610541 - One-time programmable memory structure (2026-04-21),
11. 12500115 - Semiconductor device and method for fabricating the same (2025-12-16),
12. 12477814 - Semiconductor device and method of fabricating the same (2025-11-18),
13. 12419060 - Data storage cell, memory, and memory fabrication method thereof (2025-09-16),
14. 12396194 - High electron mobility transistor and method for fabricating the same (2025-08-19),
15. 12389593 - One-time programmable memory cell (2025-08-12),

Title: Sheng-Yuan Hsueh - Innovator from Tainan, Taiwan

Introduction: Sheng-Yuan Hsueh is a renowned inventor hailing from Tainan, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sheng-Yuan Hsueh holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Sheng-Yuan Hsueh has worked with leading tech companies and research institutions, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Sheng-Yuan Hsueh has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge exchange.

Conclusion: Sheng-Yuan Hsueh's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and entrepreneurs in Taiwan and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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