The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Apr. 09, 2024
United Microelectronics Corp., Hsin-Chu City, TW;
Chang-Yih Chen, Tainan City, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Chun-Hsien Lin, Tainan City, TW;
Chih-Chin Tsai, Tainan City, TW;
Chih-Kai Kang, Tainan City, TW;
Kun-Szu Tseng, Tainan City, TW;
Sheng-Yuan Hsueh, Tainan City, TW;
Yao-Jhan Wang, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A semiconductor device includes a metal gate on a substrate, an interlayer dielectric (ILD) layer around the metal gate, and a recess between the ILD layer and the metal gate. Preferably, the metal gate includes a high-k dielectric layer on the substrate, a work function metal (WFM) layer on the high-k dielectric layer, and a low resistance metal layer on the WFM layer, a top surface of the WFM layer is lower than a top surface of the high-k dielectric layer, a top surface of the WFM layer is lower than a top surface of the low resistance metal layer, and the recess is in the WFM layer.