Tainan, Taiwan

Chang-Yih Chen

This inventor holds 10 USPTO granted patents and 16 published patent applications. Top assignee: United Microelectronics Corp.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Yih Chen. Retrieved from https://idiyas.com/inventor/chang-yih-chen-shlislzp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 10 

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 1


Company Filing History:


Years Active: 2016-2026

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10 patents (USPTO):Explore Patents

Title: Chang-Yih Chen: Innovator in Semiconductor Technology

Introduction

Chang-Yih Chen is an inventor based in Tainan City, Taiwan. He is known for his contributions to the field of semiconductor technology. Although he currently holds no granted patents, his innovative work is reflected in his latest patent applications.

Latest Patent Applications

Chang-Yih Chen has filed several notable patent applications. One of his latest applications is for an "Embedded High-Voltage Semiconductor Device and Fabrication Method Thereof." This device includes a substrate with both low-voltage and high-voltage device regions, an ILD layer, and interconnection metal layers designed for each region. The second interconnection metal layer is located in the high-voltage device region and features a denser IMD layer compared to the first.

Another significant application is for a "Semiconductor Device," which comprises a metal gate on a substrate, surrounded by an interlayer dielectric (ILD) layer. This design includes a recess between the ILD layer and the metal gate, with specific layers of high-k dielectric and work function metal that enhance the device's performance.

Conclusion

Chang-Yih Chen's work in semiconductor technology showcases his innovative spirit and dedication to advancing the field. His latest patent applications reflect his commitment to developing cutting-edge solutions in high-voltage semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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