The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jul. 12, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Chih-Yi Wang, Tainan City, TW;
Ya-Ting Hu, Kaohsiung City, TW;
Wei-Che Chen, Kaohsiung City, TW;
Chang-Yih Chen, Tainan City, TW;
Kun-Szu Tseng, Tainan City, TW;
Yao-Jhan Wang, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of providing a substrate having a medium-voltage (MV) region and a low-voltage (LV) region, forming fin-shaped structures on the LV region, forming an insulating layer between the fin-shaped structures, forming a hard mask on the LV region, and then performing a thermal oxidation process to form a gate dielectric layer on the MV region. Preferably, a hump is formed on the substrate surface of the MV region after the hard mask is removed, in which the hump further includes a first hump adjacent to one side of the substrate on the MV region and a second hump adjacent to another side of the substrate on the MV region.