United Microelectronics Corp.

Chang-Yih Chen

Yi-Wen Chen

Chia-Chen Sun

Shih-Chang Tsai

Tzu-Chin Tseng

Hsiao-Ting Lin

Sam Lai

An interconnect for physically unclonable function (PUF), comprised of multiple arranged PUF cells. Each PUF cell includes at least two L-shaped metal line, wherein each L-shaped metal line includes a first part and a second part and is adjacent to a dummy metal line, and the first part of one L-shaped metal line is electrically connected to adjacent second part of another L-shaped metal line through via in vertical direction.

Interconnects for physically unclonable function and method of achieving physically unclonable function through interconnects

A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

Semiconductor device and method for manufacturing the same

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Tainan, Taiwan

Chang-Yih Chen