The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 14, 2023
United Microelectronics Corp., Hsin-Chu City, TW;
Chang-Yih Chen, Tainan City, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Chun-Hsien Lin, Tainan City, TW;
Kun-Szu Tseng, Tainan City, TW;
Sheng-Yuan Hsueh, Tainan City, TW;
Yao-Jhan Wang, Tainan City, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region, forming a first fin-shaped structure on the MOSCAP region, performing a monolayer doping (MLD) process on the first fin-shaped structure, and then performing an anneal process for driving dopants into the first fin-shaped structure. Preferably, the MLD process is further accomplished by first performing a wet chemical doping process on the first fin-shaped structure and then forming a cap layer on the non-MOSCAP region and the MOSCAP region.