The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Sep. 18, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventors:

Hung-Chan Lin, Tainan City, TW;

Chang-Yih Chen, Tainan City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/40 (2026.01); H10B 61/00 (2023.01); H10W 20/00 (2026.01);
U.S. Cl.
CPC ...
H10W 42/40 (2026.01); H10B 61/00 (2023.02); H10W 20/01 (2026.01);
Abstract

A method for fabricating a physically unclonable function (PUF) device includes the steps of first providing a substrate comprising a magnetoresistive random access memory (MRAM) region, a PUF cell region, and a non-PUF cell region, forming a first metal interconnection on the MRAM region, forming a second metal interconnection on the PUF cell region, and forming a third metal interconnection on the non-PUF cell region. Preferably, the first metal interconnection and the second metal interconnection include patterns of different shapes and the first metal interconnection and the third metal interconnection include patterns of same shape.


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