Hung-Chan Lin

This inventor holds 30 USPTO granted patents and 14 published patent applications and 1 EPO patent, primarily in Magnetoresistive Memory. Top assignee: United Microelectronics Corp.. Active years: 2001-2026.

USPTO Granted Patents = 30 (Patent Applications = 14)

% Patents Active = 100.0

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 2.8

ph-index = 4

Forward Citations = 40(Granted Patents)

Location History:

KaoShiung, TW (2001)
Tainan, TW (2018 - 2024)

Company Filing History:

30 out of 7,269

United Microelectronics Corp.

patents

Years Active: 2001-2026

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Areas of Expertise:

Magnetoresistive Random Access Memory

Semiconductor Device

Fabrication Method

Physically Unclonable Function

Integrated Circuit

Dynamic Random Access Memory

Magnetoresistance Device

Metal-Insulator-Metal Capacitor

Memory Cell

Self-Aligned Via Holes

Layout Pattern

SOT MRAM Structure

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12660629 - Method for fabricating physically unclonable function device (2026-06-16),

2. 12464958 - Magnetoresistive random access memory (MRAM) device and method of forming the same (2025-11-04),

3. 12439832 - Semiconductor device and method for fabricating the same (2025-10-07),

4. 12437790 - Semiconductor structure and manufacturing method thereof (2025-10-07),

5. 12389808 - Semiconductor device and method for fabricating the same (2025-08-12),

6. 12369499 - Magnetoresistive random access memory and method of manufacturing the same (2025-07-22),

7. 12317512 - SOT MRAM structure and fabricating method of the same (2025-05-27),

8. 12310259 - Semiconductor device and method for fabricating the same (2025-05-20),

9. 12262544 - Magnetoresistive random access memory and method for fabricating the same (2025-03-25),

10. 12256556 - Magnetoresistive random access memory and method for fabricating the same (2025-03-18),

11. 12190926 - Layout pattern of magnetoresistive random access memory (2025-01-07),

12. 12089508 - Semiconductor device and method for fabricating the same (2024-09-10),

13. 11968911 - Semiconductor device and method for fabricating the same (2024-04-23),

14. 11968910 - Semiconductor device and method for fabricating the same (2024-04-23),

15. 11956973 - Magnetoresistive random access memory and method for fabricating the same (2024-04-09),

Title: The Innovative Journey of Inventor Hung-Chan Lin

Introduction: Hung-Chan Lin, a talented inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Hung-Chan Lin's latest patents include a cutting-edge smart home device that revolutionizes the way we interact with our living spaces, and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, Hung-Chan Lin has established himself as a visionary in the tech industry. His work has been recognized globally, earning him prestigious awards for his inventive solutions.

Collaborations: Throughout his career, Hung-Chan Lin has collaborated with leading tech companies and research institutions to further develop and implement his innovative ideas. His ability to work across disciplines has led to the creation of groundbreaking technologies that have changed the way we live and work.

Conclusion: Hung-Chan Lin's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors. His impact on the tech industry is undeniable, and his legacy will undoubtedly shape the future of technology for years to come.