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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12464958 B1

PDFFull Text
Date of Patent:
Nov. 04, 2025

Filed:

Aug. 22, 2022

Magnetoresistive random access memory (mram) device and method of forming the same

Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Chih-Wei Kuo, Tainan, TW;

Hung-Chan Lin, Tainan, TW;

Chung Yi Chiu, Tainan, TW;

Assignee:

United Microelectronics Corp., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Latanya N Crawford Eason

Int. Cl.
CPC ...
H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01);
U.S. Cl.
CPC ...
H10N 52/80 (2023.02); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02);
Abstract

Provided is a magnetoresistive random access memory (MRAM) device including a bottom electrode, a magnetic tunnel junction (MTJ) structure, a first spin orbit torque (SOT) layer, a cap layer, a second SOT layer, an etch stop layer, and an upper metal line layer. The MTJ structure is disposed on the bottom electrode. The first SOT layer is disposed on the MTJ structure. The cap layer is disposed on the first SOT layer. The second SOT layer is disposed on the cap layer. The etch stop layer is disposed on the second SOT layer. The upper metal line layer penetrates though the etch stop layer and is landed on the second SOT layer.

Find Patent Forward Citations

Kuo, Chih-Wei. (2025). Magnetoresistive random access memory (mram) device and method of forming the same (U.S. Patent No. 12464958). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12464958

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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