The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 19, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Hung-Chan Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/01 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 52/01 (2023.02); H10B 61/00 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02);
Abstract
A method for fabricating semiconductor device includes the steps of forming a first inter-metal dielectric (IMD) layer, forming two via holes and a trench in the first IMD layer, forming a metal layer in the two via holes and the trench for forming a metal interconnection and a spin orbit torque (SOT) layer, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first hard mask on the MTJ, forming a second hard mask on the first hard mask, forming a cap layer adjacent to the MTJ, and forming a second IMD layer around the cap layer.