The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jan. 13, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Hung-Chan Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic random access memory (MRAM) region and a logic region, forming a first inter-metal dielectric (IMB) layer on the substrate, forming a first metal interconnection and a second metal interconnection in the first IMD layer on the MRAM region, forming a spin orbit torque (SOT) layer on the first metal interconnection and the second metal interconnection, forming a magnetic tunneling junction (MTJ) stack on the SOT layer, forming a hard mask on the MTJ stack, using the hard mask to pattern the MTJ stack for forming the MTJ, forming the cap layer on the SOT layer and the hard mask, and patterning the cap layer and the SOT layer.