The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Sep. 20, 2023
United Microelectronics Corp., Hsinchu, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Chi-Horn Pai, Tainan City, TW;
Chang Chien Wong, Tainan City, TW;
Sheng-Yuan Hsueh, Tainan City, TW;
Ching Hsiang Tseng, Tainan City, TW;
Shih-Chieh Hsu, New Taipei City, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A one-time programmable memory structure comprises: A transistor includes a gate. A capacitor includes a first electrode, a second electrode, and an insulating layer. The second electrode is disposed on the first electrode. A top surface of the first electrode and a top surface of the gate are located on a same plane perpendicular to a direction of the first electrode toward the second electrode. An interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode. A resistor comprises a conductive layer. Top and bottom surfaces of the conductive layer are respectively located on a same plane, perpendicular to the direction of the first electrode toward the second electrode, with the top and bottom surfaces of the gate.