The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 13, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Kuo-Hsing Lee, Hsinchu County, TW;
Chang-Chien Wong, Tainan, TW;
Sheng-Yuan Hsueh, Tainan, TW;
Ching-Hsiang Tseng, Tainan, TW;
Chi-Horn Pai, Tainan, TW;
Shih-Chieh Hsu, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A one-time programmable (OTP) memory cell includes a substrate having an active area surrounded by an isolation region. A divot is disposed between the active area and the isolation region. A transistor is disposed on the active area. A diffusion-contact fuse is electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region. A sidewall surface of the diffusion region in the divot is covered by the silicide layer. The divot is filled with the contact.