The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2026
Filed:
Jun. 20, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Kuo-Hsing Lee, Hsinchu County, TW;
Chun-Hsien Lin, Tainan City, TW;
Yung-Chen Chiu, Taichung City, TW;
Sheng-Yuan Hsueh, Tainan City, TW;
Chi-Horn Pai, Tainan City, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 1/47 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 1/47 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01);
Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a resistor region, forming a first gate structure on the resistor region, forming a first interlayer dielectric (ILD) layer around the first gate structure, transforming the first gate structure into a first metal gate having a gate electrode on the substrate and a hard mask on the gate electrode, and then forming a resistor on the first metal gate.