Sey-Shing Sun

USPTO Granted Patents = 38 (Patent Applications = 1)

Average Co-Inventor Count = 3.4

ph-index = 10

Forward Citations = 376(Granted Patents)

Location History:

Beaverton, OR (US) (1990 - 2002)
Portland, OR (US) (2005 - 2017)

Company Filing History:

12 out of 3,715

Lsi Logic Corporation

Planner Systems, Inc.

7. 5 out of 832,680

Other

patents

Years Active: 1990-2017

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38 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9647208 - Low voltage embedded memory having conductive oxide and electrode stacks (2017-05-09),

2. 9231204 - Low voltage embedded memory having conductive oxide and electrode stacks (2016-01-05),

3. 8552560 - Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing (2013-10-08),

4. 8384165 - Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow (2013-02-26),

5. 8076779 - Reduction of macro level stresses in copper/low-K wafers (2011-12-13),

6. 7956401 - Bi-axial texturing of high-K dielectric films to reduce leakage currents (2011-06-07),

7. 7915122 - Self-aligned cell integration scheme (2011-03-29),

8. 7619272 - Bi-axial texturing of high-K dielectric films to reduce leakage currents (2009-11-17),

9. 7582566 - Method for redirecting void diffusion away from vias in an integrated circuit design (2009-09-01),

10. 7531442 - Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing (2009-05-12),

11. 7436040 - Method and apparatus for diverting void diffusion in integrated circuit conductors (2008-10-14),

12. 7405116 - Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow (2008-07-29),

13. 7402770 - Nano structure electrode design (2008-07-22),

14. 7365015 - [object Object] (2008-04-29),

15. 7361965 - Method and apparatus for redirecting void diffusion away from vias in an integrated circuit design (2008-04-22),

Title: Innovator Spotlight: Sey-Shing Sun

Introduction: Sey-Shing Sun is a prominent inventor based in Portland, Oregon. With an impressive portfolio of 38 patents, he has significantly contributed to the field of low voltage embedded memory technologies. His innovations focus on advancing memory elements and optimizing their performance.

Latest Patents: One of Sey-Shing Sun's latest patents is titled "Low voltage embedded memory having conductive oxide and electrode stacks." This patent describes a material layer stack for a memory element, beginning with a first conductive electrode. A conductive oxide layer is positioned on top of this electrode, characterized by having a plurality of oxygen vacancies. To complete the assembly, a second electrode is placed over the conductive oxide layer. This inventive approach aims to enhance the functionality and efficiency of embedded memory systems.

Career Highlights: Throughout his career, Sey-Shing Sun has worked with esteemed organizations such as LSI Logic Corporation and LSI Corporation. His dedication to innovation in memory technology has made him a respected figure in the industry, enabling advancements that benefit various applications in electronics.

Collaborations: Sey-Shing Sun has had the opportunity to collaborate with notable professionals, including Peter Austin Burke and Hemanshu D. Bhatt. These partnerships have fostered a collaborative environment, encouraging the exchange of ideas and contributing to the evolution of memory technology.

Conclusion: Sey-Shing Sun's contributions to the field of low voltage embedded memory demonstrate his commitment to innovation and excellence. With 38 patents to his name, his work continues to influence advancements in memory systems and electronics. As he pushes the boundaries of technology, Sey-Shing Sun remains a pivotal figure in the realm of inventors.

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