Lsi Logic Corporation

Lsi Corporation

Planar Systems, Inc.

Other

Intel Corporation

Nantero, Inc.

Planner Systems, Inc.

Sey-Shing Sun

Peter Austin Burke

Hemanshu D Bhatt

Wai Lo

Byung-Sung Kwak

Richard T Tuenge

Verne C Hornback

P Niel Yocom

Richard J Carter

Wilbur G Catabay

Eric R Dickey

Jayanthi Pallinti

Hong Ying

Dilip Vijay

Chiyi Kao

Charles E May

Derryl D J Allman

David T Price

Hong Lin

David Pritchard

Michael Stephen Bowen

Jim Kane

Robert S Chau

Brian S Doyle

Charles C Kuo

Elijah V Karpov

Wei-Jen Hsia

Vladimir Zubkov

Paul Howard Holloway

Christopher N King

Hongqiang Lu

Shiqun Gu

Mark Rogers Davidson

Qwai Hoong Low

James G Kane

Ramaswamy Ranganathan

Hong-Qiang Lu

James R B Elmer

Hao Cui

William K Barth

Agajan Suvkhanov

Grace S Sun

Hans-Werner Schock

Sethuraman Lakshminarayanan

Michael S Bowen

John S Lewis, Iii

Karen Elizabeth Waldrip

Philip D Rack

Christian F Schaus

Randall C Wentross

T Achim Oberacker

Reiner H Mauch

Karl-Otto Velthaus

Randall Wentross

Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

Low voltage embedded memory having conductive oxide and electrode stacks

Embodiments include low voltage embedded memory having conductive oxide and electrode stacks. A material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

Passivation integration schemes and pad structures to reduce the stress gradients and/or improve the contact surface existing between the Al in the pad and the gold wire bond. One of the pad structures provides a plurality of recessed pad areas which are formed in a single aluminum pad. An oxide mesa can be provided under the aluminum pad. Another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a copper pad and a plurality of trench/via pads. Still another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a portion of a copper pad, such that the aluminum pad and the copper pad are staggered relative to each other.

Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing

A method to maintain a well-defined gate stack profile, deposit or grow a uniform gate dielectric, and maintain gate length CD control by means of an inert insulating liner deposited after dummy gate etch and before the spacer process. The liner material is selective to wet chemicals used to remove the dummy gate oxide thereby preventing undercut in the spacer region. The method is aimed at making the metal gate electrode technology a feasible technology with maximum compatibility with the existing fabrication environment for multiple generations of CMOS transistors, including those belonging to the 65 nm, 45 nm and 25 nm technology nodes, that are being used in analog, digital or mixed signal integrated circuit for various applications such as communication, entertainment, education and security products.

Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow

A pad structure and passivation scheme which reduces or eliminates IMC cracking in post wire bonded dies during Cu/Low-k BEOL processing. A thick 120 nm barrier layer can be provided between a 1.2 &#x3bc;m aluminum layer and copper. Another possibility is to effectively split up the barrier layer, where the aluminum layer is disposed between the two barrier layers. The barrier layers may be 60 nm while the aluminum layer which is disposed between the barrier layers may be 0.6 &#x3bc;m. Another possibility is provide an extra 0.6 &#x3bc;m aluminum layer on the top barrier layer. Still another possibility is to provide an extra barrier layer on the top-most aluminum layer, such that a top barrier layer of 60 nm is provided on a 0.6 &#x3bc;m aluminum layer, followed by another harrier layer of 60 nm, another aluminum layer of 0.6 &#x3bc;m and another barrier layer of 60 nm.

Reduction of macro level stresses in copper/low-K wafers

The present invention is directed to methods of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a high-K dielectric material assisted with an ion beam to enable the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric films have a high degree of crystallographic alignment at grain boundaries. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The result is a dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.

Bi-axial texturing of high-K dielectric films to reduce leakage currents

A method of forming a self-aligned logic cell. A nanotube layer is formed over the bottom electrode. A clamp layer is formed over the nanotube layer. The clamp layer covers the nanotube layer, thereby protecting the nanotube layer. A dielectric layer is formed over the clamp layer. The dielectric layer is etched. The clamp layer provides an etch stop and protects the nanotube layer. The clamp layer is etched with an isotropic etchant that etches the clamp layer underneath the dielectric layer, creating an overlap of the dielectric layer, and causing a self-alignment between the clamp layer and the dielectric layer. A spacer layer is formed over the nanotube layer. The spacer layer is etched except for a ring portion around the edge of the dielectric layer. The nanotube layer is etched except for portions that are underlying at least one of the clamp layer, the dielectric layer, and the spacer layer, thereby causing a self-alignment between the clamp layer, the overlap to the dielectric layer, the spacer layer, and the nanotube layer.

Self-aligned cell integration scheme

The present invention is directed to a method of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method involves providing a substrate and then depositing a material used in forming the high-K dielectric film and also using an ion beam to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film. Another disclosed method involves providing a substrate and then angularly depositing a material onto the substrate in order to assist in the preferential formation of crystal lattices having a selected crystallographic orientation. The resultant dielectric film having a high degree of crystallographic alignment at grain boundaries of the film.

A method for redirecting void diffusion away from vias in an integrated circuit design includes steps of forming an electrical conductor in a first electrically conductive layer of an integrated circuit design, forming a via between a distal end of the electrical conductor and a second electrically conductive layer of the integrated circuit design, and reducing tensile stress in the electrical conductor to divert void diffusion away from the via.

Method for redirecting void diffusion away from vias in an integrated circuit design

Different ways to reduce or eliminate the IMC cracking issues in wire bonded parts, including: changing to more compressive dielectric films for top, R1, and R2; changing the top passivation film stacks to more compressive films; changing the low k film to a higher compressive film; reducing the R layer thickness and pattern density to reduce tensile stress; and minimizing anneal and dielectric deposition temperatures. Each of the methods can be used individually or in combination with each other to reduce overall tensile stresses in the Cu/low-k wafer thus reducing or eliminating the IMC cracking issue currently seen in the post wire bonded parts.

Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing

A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first electrically conductive layer and a second electrically conductive layer of the integrated circuit, and forming a slot between the via and the boundary of the electrical conductor for diverting void diffusion in the electrical conductor away from the via.

Method and apparatus for diverting void diffusion in integrated circuit conductors

A microelectronic switch having a substrate layer, an electrically conductive switching layer formed on the substrate layer, an electrically conductive cavity layer formed on the switching layer, an electrically conductive cap layer formed on the cavity layer, the cap layer forming a first electrode and a second electrode that are physically and electrically separated one from another, and which both at least partially overlie the switching layer, and a cavity disposed between the switching layer and the second electrode, where the switching is layer is flexible to make electrical contact with the second electrode by flexing through the cavity upon selective application of an electrical bias.

Nano structure electrode design

A method of forming a metal gate in a wafer. PolySiGeand polysilicon are used to form a tapered groove. Gate oxide, PolySiGe, and polysilicon is deposited on a wafer. A resist pattern is formed. A portion of the polysilicon, PolySiGe, and gate oxide is removed to provide a tapered profile. The resist is removed; a dielectric liner is deposited, and then at least a portion of the dielectric liner is removed, thereby exposing the polysilicon and leaving the dielectric liner in contact with the polysilicon, PolySGe, and gate oxide. A dielectric is deposited, and a portion is removed thereby exposing the polysilicon. The polysilicon, PolySiGe, and gate oxide is removed from inside the dielectric liner, thereby leaving a tapered gate groove. Metal is then deposited in the groove.

[object Object]

A method and apparatus for redirecting void diffusion away from vias in an integrated circuit design includes steps of forming an electrical conductor in a first electrically conductive layer of an integrated circuit design, forming a via between a distal end of the electrical conductor and a second electrically conductive layer of the integrated circuit design, and reducing tensile stress in the electrical conductor to divert void diffusion away from the via.

Method and apparatus for redirecting void diffusion away from vias in an integrated circuit design

Growing community of inventors

Portland, OR, United States of America

Sey-Shing Sun