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For the Inventor, By the Inventor

Dallas, TX, United States of America

Reima Tapani Laaksonen

This inventor holds 17 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Processing. Top assignee: Texas Instruments Corporation. Active years: 2000-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Reima Tapani Laaksonen. Retrieved from https://idiyas.com/inventor/reima-tapani-laaksonen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17

% Patents Active = 94.1


Average Co-Inventor Count = 2.7

ph-index = 7

Forward Citations = 184(Granted Patents)


Company Filing History:

goldMedal17 out of 29,936 
 
Texas Instruments Corporation
 patents

Years Active: 2000-2014

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Areas of Expertise:
Semiconductor Device
Nitrogen Distribution
Gate Dielectrics
Multi Gate Devices
Polysilicon Processing
Transistor Formation
High Temperature Treatment
T-shaped MOSFET
Flash Memory
Chemical Treatment
Lithography
Low Leakage
17 patents (USPTO):Explore Patents
1. 8802577 - Method for manufacturing a semiconductor device using a nitrogen containing oxide layer (2014-08-12),
2. 8492291 - Formation of gate dielectrics with uniform nitrogen distribution (2013-07-23),
3. 7799649 - Method for forming multi gate devices using a silicon oxide masking layer (2010-09-21),
4. 7670913 - Method for forming ultra-thin low leakage multiple gate devices using a masking layer over the semiconductor substrate (2010-03-02),
5. 7459390 - Method for forming ultra thin low leakage multi gate devices (2008-12-02),
6. 7435651 - Method to obtain uniform nitrogen profile in gate dielectrics (2008-10-14),
7. 7393787 - Formation of nitrogen containing dielectric layers having a uniform nitrogen distribution therein using a high temperature chemical treatment (2008-07-01),
8. 6866974 - Semiconductor process using delay-compensated exposure (2005-03-15),
9. 6803661 - Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography (2004-10-12),
10. 6762130 - Method of photolithographically forming extremely narrow transistor gate elements (2004-07-13),
11. 6737325 - Method and system for forming a transistor having source and drain extensions (2004-05-18),
12. 6624068 - Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography (2003-09-23),
13. 6582973 - Method for controlling a semiconductor manufacturing process (2003-06-24),
14. 6482688 - Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gate (2002-11-19),
15. 6362111 - Tunable gate linewidth reduction process (2002-03-26),

Title: The Innovations of Reima Tapani Laaksonen: A Pioneer in Semiconductor Technology

Introduction: Reima Tapani Laaksonen is an accomplished inventor based in Dallas, TX, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 17 patents, Laaksonen has established himself as a leading figure in innovation. His work has not only advanced semiconductor manufacturing but also paved the way for new technological applications.

Latest Patents: Among his notable inventions, Laaksonen's latest patents include a method for manufacturing a semiconductor device using a nitrogen-containing oxide layer. This invention involves providing a gate structure over a substrate, which comprises a gate electrode situated above a nitrided gate dielectric. The method further encompasses the formation of a nitrided region over the gate dielectric's sidewall. Another significant patent focuses on the formation of gate dielectrics with uniform nitrogen distribution. This process entails the provision of a nitrided dielectric layer over a substrate, where the layer has a nonuniform nitrogen concentration. By exposing the dielectric to oxygen radicals, the invention seeks to reduce this non-uniformity, thereby enhancing device performance.

Career Highlights: Laaksonen is associated with Texas Instruments Corporation, a prominent name in the semiconductor industry. His innovative approaches and patents highlight his commitment to enhancing semiconductor device functionality, making substantial impacts on the sector.

Collaborations: Throughout his career, Laaksonen has collaborated with talented professionals such as Hiroaki Niimi and Jarvis Benjamin Jacobs. These partnerships have fostered an environment of collective innovation and have significantly contributed to the development of advanced semiconductor technologies.

Conclusion: Reima Tapani Laaksonen's work exemplifies the spirit of innovation within the semiconductor industry. His 17 patents reflect a deep understanding of semiconductor manufacturing and are instrumental in advancing new technologies. As he continues his journey at Texas Instruments Corporation, Laaksonen is poised to impact the future of technology significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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