The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Aug. 22, 2005
Hiroaki Niimi, Dallas, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Mahalingam Nandakumar, Richardson, TX (US);
Hiroaki Niimi, Dallas, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Mahalingam Nandakumar, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing a gate dielectric, a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit. The method for manufacturing the gate dielectric, without limitation, may include forming a nitrided dielectric layer () over a substrate (), the nitrided dielectric layer () having a non-uniformity of nitrogen in a bulk thereof, and removing at least a portion of the nitrided dielectric layer () using a high temperature chemical treatment, the removing reducing the non-uniformity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile