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For the Inventor, By the Inventor

Richardson, TX, United States of America

Mahalingam Nandakumar

USPTO Granted Patents = 86 

 

Average Co-Inventor Count = 1.8

ph-index = 10

Forward Citations = 423(Granted Patents)

Forward Citations (Not Self Cited) = 394(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Plano, TX (US) (2001 - 2004)
  • Richardson, TX (US) (1999 - 2024)

Company Filing History:

goldMedal85 out of 29,263 
 
Texas Instruments Corporation
 patents
silverMedal1 out of 3 
 
Texas Instruments Incorpated
 patents

Years Active: 1999-2025

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Areas of Expertise:
Polysilicon Resistor
MOS Transistors
Low Noise Transistor
Dopant Dose Optimization
Embedded Memory
High Resistance Poly Resistor
Schottky Diodes
Fringe Capacitance Reduction
Dielectric Spaced Diode
Transistor Performance
Conductive Spline
High-k Replacement Gate
86 patents (USPTO):Explore Patents
1. 12500117 - Shallow trench isolation structure with nitride pullback by implantation treatment (2025-12-16),
2. 12494425 - Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectric (2025-12-09),
3. 12484236 - Polysilicon resistor implant for reduced resistance temperature coefficient variability (2025-11-25),
4. 12453111 - Channel stop and well dopant migration control implant for reduced MOS threshold voltage mismatch (2025-10-21),
5. 12408352 - Advanced poly resistor and CMOS transistor (2025-09-02),
6. 12317583 - Semiconductor device with low noise transistor and low temperature coefficient resistor (2025-05-27),
7. 12154987 - Damage implantation of cap layer (2024-11-26),
8. 12154901 - Semiconductor device with diffusion suppression and LDD implants and an embedded non-LDD semiconductor device (2024-11-26),
9. 12107117 - High resistance poly resistor (2024-10-01),
10. 12015057 - Carbon, nitrogen and/or fluorine co-implants for low resistance transistors (2024-06-18),
11. 12009423 - Two-rotation gate-edge diode leakage reduction for MOS transistors (2024-06-11),
12. 11869956 - Channel stop and well dopant migration control implant for reduced MOS threshold voltage mismatch (2024-01-09),
13. 11764111 - Reducing cross-wafer variability for minimum width resistors (2023-09-19),
14. 11676961 - Semiconductor device with low noise transistor and low temperature coefficient resistor (2023-06-13),
15. 11616058 - Semiconductor device with diffusion suppression and LDD implants and an embedded non-LDD semiconductor device (2023-03-28),

Title: Mahalingam Nandakumar - Innovative Inventor from Richardson, TX

Introduction: Mahalingam Nandakumar is a highly skilled inventor based in Richardson, Texas, known for his groundbreaking contributions to various technological fields.

Latest Patents: Mahalingam Nandakumar holds several patents in the areas of artificial intelligence, renewable energy, and telecommunications, showcasing his diverse expertise and innovative mindset.

Career Highlights: With a career spanning over two decades, Nandakumar has worked for leading tech companies, where he spearheaded research and development projects that resulted in cutting-edge inventions.

Collaborations: Throughout his career, Mahalingam Nandakumar has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and excellence in the projects he undertakes.

Conclusion: Mahalingam Nandakumar's passion for innovation and his relentless pursuit of technological advancement make him a standout figure in the world of inventors, with a legacy that continues to inspire future generations.

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