The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Apr. 06, 2022
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Mahalingam Nandakumar, Richardson, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/47 (2025.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H10D 1/47 (2025.01); H01L 21/26513 (2013.01); H01L 21/268 (2013.01);
Abstract
A method of forming an integrated circuit includes first forming a resistor body and a transistor gate from a semiconductor layer over a substrate. Second, sidewall spacers are formed adjacent the resistor body and the transistor gate. Third, a silicide blocking structure is formed over at least a portion of the resistor body. And fourth, the resistor body and the transistor gate are concurrently millisecond annealed.