James Joseph Chambers

USPTO Granted Patents = 70 (Patent Applications = 5)

Average Co-Inventor Count = 2.5

ph-index = 16

Forward Citations = 976(Granted Patents)

Forward Citations (Not Self Cited) = 939(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Plano, TX (US) (2003 - 2007)
Dresden, DE (2013 - 2014)
Dallas, TX (US) (2004 - 2019)
Austin, TX (US) (2013 - 2021)

Company Filing History:

68 out of 29,263

Texas Instruments Corporation

patents

1 out of 1,440

North Carolina State University

patents

1 out of 832,843

Other

patents

Years Active: 2003-2021

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Areas of Expertise:

Drinking Container

Mid-Gap Metal

High-K Metal Gate

Oxygen Diffusion Barrier

MOS Transistors

Dual Work Function CMOS

Silicate Gate Dielectrics

Triple-Gate Transistor

Refractory Metal Electrodes

Gate Dielectrics

Nitrogen Concentration

Shallow Trench Isolation

70 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10906708 - Systems and methods associated with a drinking container with a solid, integrated valve (2021-02-02),

2. 10439040 - Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget (2019-10-08),

3. 10068983 - High-K metal gate (2018-09-04),

4. 9721796 - Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget (2017-08-01),

5. 9431509 - High-K metal gate (2016-08-30),

6. 9397009 - Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer (2016-07-19),

7. 9202884 - Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget (2015-12-01),

8. 9087918 - Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer (2015-07-21),

9. 8828825 - Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistors (2014-09-09),

10. 8748996 - Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations (2014-06-10),

11. 8748992 - MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls (2014-06-10),

12. 8658489 - Method for dual work function metal gate CMOS with selective capping (2014-02-25),

13. 8643113 - Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer (2014-02-04),

14. 8575014 - Semiconductor device fabricated using a metal microstructure control process (2013-11-05),

15. 8536654 - Structure and method for dual work function metal gate CMOS with selective capping (2013-09-17),

Title: The Innovative Mind of James Joseph Chambers

Introduction: James Joseph Chambers is a renowned inventor based in Dallas, Texas, known for his groundbreaking contributions to various industries.

Latest Patents: James Joseph Chambers holds several patents in the fields of technology, healthcare, and consumer products, showcasing his diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, James Joseph Chambers has consistently pushed the boundaries of innovation, leading to significant advancements in his areas of expertise.

Collaborations: Throughout his career, James Joseph Chambers has collaborated with leading companies, research institutions, and universities to bring his inventions to life, further solidifying his reputation as a visionary inventor.

Conclusion: James Joseph Chambers continues to inspire the next generation of inventors with his creative thinking and relentless pursuit of innovation.

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5 patents pending:

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